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MIP0224SY - Silicon MOS IC

Features

  • q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 6.8±0.1 1.4±0.1 q Switching power supply (to 90W) q AC adaptor q Battery charger 15.4±0.3 4.2±0.3 φ3.7±0.1 1.4±0.1 13.5±0.5 Solder Dip 2.5±0.2 Parameter Drain voltage Control voltage Symbol VD VC R.

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Full PDF Text Transcription (Reference)

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 10.5±0.5 4.5±0.2 2.8±0.2 1.5±0.2 9.5±0.2 8.0±0.2 6.8±0.1 1.4±0.1 q Switching power supply (to 90W) q AC adaptor q Battery charger 15.4±0.3 4.2±0.3 φ3.7±0.1 1.4±0.1 13.5±0.5 Solder Dip 2.5±0.2 Parameter Drain voltage Control voltage Symbol VD VC Ratings 700 8 MIP0221SY 0.3 Unit V V 2.54±0.3 5.08±0.5 9.3 s Absolute Maximum Ratings (Ta = 25 ± 3°C) 0.8±0.1 0.6±0.1 MIP0222SY 0.585 MIP0223SY 1.
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